dm p3036 sss document number: ds 36460 rev. 3 - 2 1 of 6 www.diodes.com april 2015 ? diodes incorporated dm p3036 sss new product p - channel enhancement mode mosfet product summary v (br)dss r ds(on) max i d t c = + 25 c - 3 0 v 20 m @ v gs = - 10 v - 1 9.5 a 29m @ v gs = - 5 v - 1 6.2 a description this new generation mosfet is designed to minimize the on - state resistance (r ds(on) ) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. applications ? dc - dc converters ? power management f unctions ? backlighting features ? low on - resistance ? low input capacitance ? fast switching sp eed ? low input/output leakage ? totally lead - free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. green device (note 3) mechanical data ? case: so - 8 ? case material: molded plastic, green molding compound ; ul flammability classification r ating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminal connections: see diagram below ? weight: 0.076 grams ( a pproximate) ordering information (note 4 ) part number case packaging dm p3036 sss - 13 so - 8 2500 / tape & reel notes: 1 . no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "gr een" and lead - f ree . 3. halogen - and antimony - free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. for packaging details, go to our website at http//www.diodes.com/products/packages.html . marking information = manufacturers marking 1 4 8 5 p 3036 s s ww yy so - 8 so - 8 equivalent circuit d s g t op view so - 8 t op view pin configuration s d s d g s d d pin1 so - 8
dm p3036 sss document number: ds 36460 rev. 3 - 2 2 of 6 www.diodes.com april 2015 ? diodes incorporated dm p3036 sss new product maximum ratings (@ t a = +25c, unless otherwise specified.) characteristic symbol value unit drain - source voltage v dss - 30 v gate - source voltage v gss 2 5 v continuous drain current (note 5 ) v gs = - 10v t c = + 25c t c = + 70 c i d - 19.5 - 1 5.6 a t a = + 25c t a = + 70 c i d - 11.4 - 9.2 a pulsed drain curren t ( 10 dm - 8 0 a maximum continuous body diode f orward current (note 6 ) i s - 3.6 a avalanche current (note 7 ) l = 0. 3 mh i a s - 17.5 a avalanche energy (note 7) l = 0. 3 mh e a s 64 mj thermal characteristics ( @t a = +25c, unless otherwise specified.) characteristic symbol value units total power dissipation (note 5) t a = +25 c p d 1. 4 w t a = + 70 c 0.9 thermal resistance, junction to ambient (note 5) s teady s tate r ? ja 8 8 c/w t<10s 37 total power dissipation (note 6 ) t a = +25c p d 1. 9 w t a = + 70 c 1. 2 thermal resistance, junction to ambient (note 6 ) s teady s tate r ja 65 c/w t<10s 3 2 thermal resistance, junction to case (note 6 ) r j c 11 operating a nd storage temperature range t j, t stg - 55 to +150 c electrical characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 8 ) drain - source breakdown voltage bv dss - 30 - - v v gs = 0v, i d = - 1m a zero gate voltage drain current t j = + 25c i dss - - - 1 .0 a ds = - 30 v, v gs = 0v gate - source leakage i gss - - 100 n a v gs = 25 v, v ds = 0v on characteristics (note 8 ) gate threshold voltage v gs(th) - 1.0 - 1.7 - 3.0 v v ds = v gs , i d = - 250 a ds (on) - - 1 6 20 m ? gs = - 10 v, i d = - 9 a 2 2 29 v gs = - 5 v, i d = - 7 a diode forward voltage v sd - - 0.7 - 1.0 v v gs = 0v, i s = - 1a dynamic characteristics (note 9 ) input capacitance c iss - 1 931 - pf v ds = - 15 v, v gs = 0v , f = 1.0mhz output capacitance c oss - 226 - pf reverse transfer c apacitance c rss - 168 - pf gate resistance r g - 10.9 - ds = 0 v, v gs = 0v , f = 1mhz total gate charge at ( v gs = - 5 v ) q g - 8.8 - nc v ds = - 15 v, i d = - 10 a total gate charge at ( v gs = - 10 v ) q g - 16.5 - nc v ds = - 15 v, i d = - 10 a gate - source charge q gs - 2.6 - nc gate - drain charge q gd - 3.6 - nc turn - on del ay time t d(on) - 8.2 - ns v g en = - 10 v, v d d = - 15 v, r g en = 3 d = - 1 0 a turn - on rise time t r - 14 - ns turn - off delay time t d(off) - 65 - ns turn - off fall time t f - 31.6 - ns notes: 5. device mounted on fr - 4 substrate pc board, 2oz copper, with mini mum recommended pad layout. 6. device mounted on fr - 4 substrate pc board, 2oz copper, with 1 - inch square copper plate. 7. i a s and e a s rating are based on low frequency and duty cycles to keep t j = + 25c . 8 . short duration pulse test used to minimize self - h eating effect. 9 . guaranteed by design. not subject to product testing.
dm p3036 sss document number: ds 36460 rev. 3 - 2 3 of 6 www.diodes.com april 2015 ? diodes incorporated dm p3036 sss new product figure 1 typical output characteristic v , drain-source voltage (v) ds i , d r a i n c u r r e n t ( a ) d v = -3.0v gs 0 5 10 15 20 25 30 0 1 2 3 4 5 v = -4.0v gs v = -2.0v gs v = -2.5v gs v = -3.5v gs v = -5.0v gs v = -4.5v gs v = -10.0v gs figure 2 typical transfer characteristics v , gate-source voltage (v) gs i , d r a i n c u r r e n t ( a ) d 0 5 10 15 20 25 30 0 1 2 3 4 5 t = 25c a t = -55c a t = 85c a t = 125c a t =150c a v = 5.0v ds r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) figure 3 typical on-resistance vs. drain current and gate voltage i , drain-source current d 0 0.002 0.004 0.006 0.008 0.01 0.012 0.014 0.016 0.018 0.02 0.022 0.024 0.026 0.028 0.03 0 5 10 15 20 25 30 v = 10.0v gs v = 5.0v gs v = 20.0v gs v , gate-source voltage (v) gs figure 4 typical transfer characteristics r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) 0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.1 0 5 10 15 20 25 i = -5.0a d i = -10.0a d i = -11.0a d i , drain current (a) d figure 5 typical on-resistance vs. drain current and temperature r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) 0 0.005 0.01 0.015 0.02 0.025 0.03 0.035 0.04 0 5 10 15 20 25 30 v = 4.5v gs t = -55c a t = 25c a t = 85c a t = 150c a t = 125c a t , junction temperature ( c) j ? figure 6 on-resistance variation with temperature r , d r a i n - s o u r c e d s ( o n ) o n - r e s i s t a n c e ( n o r m a l i z e d ) 0.6 0.8 1 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 v = -20.0v gs i = -10.0a d v = -5.0v gs i = -3.0a d v = -10.0v gs i = -5.0a d
dm p3036 sss document number: ds 36460 rev. 3 - 2 4 of 6 www.diodes.com april 2015 ? diodes incorporated dm p3036 sss new product t , junction temperature ( c) j ? figure 7 on-resistance variation with temperature r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) 0 0.005 0.01 0.015 0.02 0.025 0.03 -50 -25 0 25 50 75 100 125 150 v = -5.0v gs i = -3.0a d v = -10.0v gs i = -5.0a d v = -20.0v gs i = -10.0a d t , junction temperature ( c) j ? figure 8 gate threshold variation vs. ambient temperature v , g a t e t h r e s h o l d v o l t a g e ( v ) g s ( t h ) 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5 -50 -25 0 25 50 75 100 125 150 i = 1ma d i = 250a d v , source-drain voltage (v) sd figure 9 diode forward voltage vs. current i , s o u r c e c u r r e n t ( a ) s 0 5 10 15 20 25 30 0 0.3 0.6 0.9 1.2 1.5 t = -55c a t = 150c a t = 25c a t = 85c a t = 125c a v , drain-source voltage (v) ds figure 10 typical drain-source leakage current vs. voltage i , d r a i n l e a k a g e c u r r e n t ( n a ) d s s 0.1 1 10 100 1000 10000 0 5 10 15 20 25 30 t = 25c a t = 85c a t = 125c a t = 150c a v , drain-source voltage (v) ds figure 11 typical junction capacitance c , j u n c t i o n c a p a c i t a n c e ( p f ) t 10 100 1000 10000 0 5 10 15 20 25 30 c iss c oss c rss f = 1mhz q , total gate charge (nc) g figure 12 gate charge v g a t e t h r e s h o l d v o l t a g e ( v ) g s 0 2 4 6 8 10 0 2 4 6 8 10 12 14 16 18 20 v = -15v ds i = -10a d
dm p3036 sss document number: ds 36460 rev. 3 - 2 5 of 6 www.diodes.com april 2015 ? diodes incorporated dm p3036 sss new product package outline dimensions please see ap02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. suggested pad layout please see ap02001 at http://www. diodes.com/datasheets/ap02001.pdf for the latest version. so - 8 d im min max a - 1.75 a1 0.10 0.20 a2 1.30 1.50 a3 0.15 0.25 b 0.3 0.5 d 4.85 4.95 e 5.90 6.10 e1 3.85 3.95 e 1.27 typ h - 0.35 l 0.62 0.82 ? ? ? ? dimensions value (in mm) x 0.60 y 1.55 c1 5.4 c2 1.27 t1, pulse duration time (sec) figure 13 transient thermal resistance r ( t ) , t r a n s i e n t t h e r m a l r e s i s t a n c e 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 d = single pulse d = 0.005 d = 0.01 d = 0.02 d = 0.05 d = 0.1 d = 0.3 d = 0.5 d = 0.7 d = 0.9 r (t) = r(t) * r thja thja r = 88c/w thja duty cycle, d = t1/ t2 gauge plane seating plane detail a detail a e e1 h l d e b a2 a1 a 45 7 ~ 9 a3 0 . 2 5 4 x c1 c2 y
dm p3036 sss document number: ds 36460 rev. 3 - 2 6 of 6 www.diodes.com april 2015 ? diodes incorporated dm p3036 sss new product important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this docum ent, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modificatio ns, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. diodes incorporated does not assume any liability a rising out of the application or use of this document or any product d escribed herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such appli cations shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any prod ucts purchased through unauthorized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemnify and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. products described herein may be covered by one or more united sta tes, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of this document is the final and determinative format released by diodes incorporated. life support diodes incorporated products a re specifically not authorized for use as critical components in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices o r systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in signi ficant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related require ments concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. furth er, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 201 5 , diodes incorporated www.diodes.com
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